High dielectric ternary oxides from crystal structure prediction and high-throughput screening
نویسندگان
چکیده
منابع مشابه
High dielectric constant oxides
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...
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ژورنال
عنوان ژورنال: Scientific Data
سال: 2020
ISSN: 2052-4463
DOI: 10.1038/s41597-020-0418-6